SOI Product request

Step 1

 Wafer Diameter: 100 mm
125 mm
150 mm
200 mm
300 mm

All our 100mm wafers have a top thickness of 340nm and a resistivity of 8 to 22 Ohm.cm.

Step 2

 Product Description: - Top Silicon Thickness (70 to 100'000 nm):
- Top Silicon Doping type
- Top Silicon Resistivity (1 to 1000 Ohm.cm):
- Buried Oxide Thickness (145 to 3000 nm):
- Base Wafer Doping type:
- Base Silicon Resistivity (1 to 1000 Ohm.cm):
- Base Wafer Thickness (350 to 775 µm):
- Base Wafer Backside:
- All wafers have SEMI standards (100) crystal orientation.

Step 3

 SOI Product Quality: Prime only
Test / Monitor authorized

Step 4

 Quantity needed:
(Minimum order quantity is 25 wafers – 10 when stock available)

Step 5

 Application: Analog & Mixed signal
Power/Discrete
CMOS Logic
Solar
Photonics
RF Devices
M(O)EMS
Memories
Other, please specify:

Step 6

 Comments / Specific Requirements:
(You can here specify which parameters are mandatory or if some are not so important; this will help to find the best product for your needs)

Step 7

 First Name *
Last Name *
Company *
Title *
Address *
City *
State
Zip Code *
Country *
Phone *
Fax
E-mail *
 
 
 

* Mandatory field

The collected data is subject to a computerized process intended to treat your request and offer an appropriate quote.

In accordance with applicable laws (French Law "Informatique et Libertés" - January 6, 1978, amended on August 6, 2004) you have the right to access, correct and delete personal information at the following email address info@soitec.fr or by writing at S.O.I.TEC Silicon On Insulator Technologies, Parc Technologique des Fontaines, Chemin des Franques, 38190 Bernin, FRANCE.

You also have the right for legitimate grounds to oppose to the process of personal data.

Step 2

 Product Description: - Top Silicon Thickness (70 to 100'000 nm):
- Top Silicon Doping type
- Top Silicon Resistivity (1 to 1000 Ohm.cm):
- Buried Oxide Thickness (145 to 3000 nm):
- Base Wafer Doping type:
- Base Silicon Resistivity (1 to 1000 Ohm.cm):
- Base Wafer Thickness (350 to 775 µm):
- Base Wafer Backside:
- All wafers have SEMI standards (100) crystal orientation.

Step 2

 Product Description: - Top Silicon Thickness (nm): 340
- Top Silicon Doping type : P
- Top Silicon Resistivity (Ohm.cm): 8-22
- Buried Oxide Thickness (nm):
- Base Wafer Doping type: P
- Base Silicon Resistivity (Ohm.cm): 8-22
- Base Wafer Thickness (µm):
- Base Wafer Backside:
- All wafers have SEMI standards (100) crystal orientation.
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